Doctors of Sciences

Place of birth: Arm. SSR, Sisian district, Agudi village

Date of birth: 06.06.1960

Education: Azerbaijan (Baku) State University

Scientific degree: Doctor of Physical Sciences

Title: Associate professor

Topic of PhD thesis:
- specialty code: 01.04.10
- specialty name: Semiconductors and dielectrics
- topic name: Electrophysical and optical properties of a solid solution of Ge-Si(Ge_1-xSi_ix:H)

Topic of doctoral thesis:
- specialty code: 2211.01
- specialty name: Solid state physics
- topic name: Electron, optical processes in hydrogenated thin films on the basis of silicon-germanium and their application perspectives

Total number of printed scientific publications: 105
- number of scientific publications printed abroad: 71
- number of papers published in journals indexed and abstracted in international databases: 24

Основные научные достижения:
1. Detected hopping mechanism at low temperatures.
2. For silicon compounds identified energy hopping, hopping distance, the wave function for the local conditions and the density of states.
3. We get the expression for determining the concentration of hydrogen atoms in the silicon structures.
4. We get the structure for the manufacture of multi-layer solar cells

Basic scientific achievements:
1. Najafov B.A, Bakirov M.Y, Mamedov V.S. and Andreev A.A. Optical properties of amorphous hydrogenated amorphous a-Si_0,90Ge_0,10:H_x. // Phys. Stat. Solids, 1991, K 119-127.
2. Наджафов Б.А. Электрические свойства аморфных пленок твердого раствора Ge_0,90Si_0,10:H_х. // Физ. и Техн. Полупроводников, т. 34, в.11, 2000, c. 1383-1385.
3. Najafov B.A. Absorption, photoconductivity and current-voltage characteristics of amorphous Ge_0,90Siо,10:H solid solutions. // Укр. Физ. журн., 2000, т. 45, №10, c. 1221-1224.
4. Наджафов Б.А., Исаков Г.И., Фигаров В.Р. Оптические свойства гидрогенизированных аморфных пленок твердого раствора a-Ge_0,85Si_0,15:H. // Прикладная физика, 2004, № 4, с. 107-114.
5. Наджафов Б.А. ЭПР и ИК спектры поглошения аморфных пленок a-Si_i-хGe_x:H. // AMEA-nın Xəbərləri, 2005, № 2, c. 139-144.
6. Наджафов Б.А. Солнечные преобразователи на основе а-Si_0,80Ge_0,20:Hх. // Прикладная физика, 2005, с.97-102.
7. Najafov B.A. Solar cells based on a-Si_0,80Ge_0,20:H amorphous films. // Укр. Физ. журн., 2005, т. 50, № 5, р. 477-482.
8. Najafov B.A. and Isakov G.I. Electrical properties of amorphous Si_0,60Ge_0,40:H_x films. // Inorganic Materials, 2005, №7, vol. 41, p. 787-791.
9. Наджафов Б.А., Исаков Г.И. Оптические свойства аморфных пленок твердого раствора а-Si_1-xGe_x:H c различной концентрацией водорода. // Журнал прикладной спектроскопии, 2005, т.72, № 3, c. 371-376.
10. Najafov B.A. Photovoltaic effects in a–Si_0,80Ge_0,10:H_x films. // Letters in International Journal for Alternativ Energy and Ecology, 2005, № 1, p. 36-38.
11. Наджафов Б.А., Исаков Г.И. Получение пленок а-Si_1-хGe_х:H, изменение ее параметров от состава. // ISIAEE Solar Energy, 2006, № 4, (36), p. 51-55.
12. Фиговский О.А., Наджафов Б.А., Исаков Г.И. Рост нанокристаллических структур аморфно гидрированных пленок кремния (а-Si:H). // Вестник Дома Ученых Хайфы, Специальный выпуск, Хайфа, 2008, с.14-23.
13. Najafov B.A. and Isakov G.I. Properties of аmorphous Si_i-xGe_x:H (x=0-1) films. // Inorganic Materials, 2009, vol. 45, № 7. p. 713-718.
14. Najafov В.А., Fiqarov V.R. Hydrogen content evaluation in hydrogenated nanocrystalline silicon and its amorphous alloys with germanium and carbon. // International Journal of Hydrogen Energy, 35, 2010, р. 4361-4367.
15. Najafov B.A. and Isakov G.I. Optical and Electrical Properties of аmorphous Si_1-xC_x:H films. // Inorganic Materials, 2010, №,6, vol. 46, p. 624-630.

Membership with international and foreign scientific organizations:
Corresponding Member of the Russian Academy of Natural Sciences

Awards and prizes:
1. Diploma "Golden Chair of Russia" of the Russian Academy of Natural Sciences
2. Order «Labore Et Scientia - difficulty and knowledge" of the Russian Academy of Natural Sciences
3. Order «Primus Inter Pares - the first among equals" of the Russian Academy of Natural Sciences
4. "Honored Worker of Science and Education" of the Russian Academy of Natural Sciences

Main place of work and its address:
Institute of Radiation Problems of the Ministry of Science and Education of the Republic of Azerbaijan, AZ1143, B.Vakhabzadeh str., 9, Baku, Azerbaijan Republic

Position: Leading researcher

Office phone: (+994 12) 5383224
Mobile: (+994 50) 3998966
Home phone: (+994 12) 4771866
E-mail: bnajafov@rambler.ru