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Doctors of Sciences

Madatov Rahim Salim oglu

Mədətov Rəhim Səlim oğlu

Place of birth: Azerbaijan, Sheki city

Date of birth: 05.09.1949

Education: Baku State University

Scientific degree: Doctor of Physical and Mathematical Sciences

Title: Professor

Topic of PhD thesis:
- specialty code: 01.04.10
- specialty name: Physics of semiconductors and dielectrics
- topic name: Photoelectric properties of photodiodes based on Ge-Si solid solution

Topic of doctoral thesis:
- specialty code: 01.04.10; 2225.01
- specialty name: Physics of semiconductors and dielectrics; Radiation materials science
- topic name: Photovoltaic and radiation effects in Ge-Si p-n junctions

Total number of printed scientific publications: 150
- number of scientific publications printed abroad: 72
- number of papers published in journals indexed and abstracted in international databases: 45

Number of patents and certificates of authorship: 17

Staff training:
- number of PhD: 15
- number of Doctor of sciences: 2

Basic scientific achievements:
      I study the effects of photovoltaic and radiation on semiconductor materials and structures based on them. For the first time, photoreceptors based on GeSi solid solutions were developed and conditions for photovoltaic and radiation effects were determined. Based on the obtained results, practical methods of photovoltaics were developed. Radiation effects were studied in A3B6 layered crystals. Gamma quanta, electron and proton beams were used in the study of these effects. It was found that the initial effect of gamma quanta on layered crystals partially compensates for conductivity, and at high radiation doses increases the conductivity due to dissociation of primary complexes. The mechanism of action on photoconductivity depends on the nature of the defects caused by radiation. Based on the results of the research, a method was developed to increase the durability of layered crystals. The effect of proton beams was studied by the Reserfort reverse scattering method. It was determined that the defects formed during irradiation are anionic in nature and the order of distribution of defects on the crystal surface and volume was determined. is done. Research is underway to study the properties of the created quantum holes. The creation of such holes will allow the creation of light-emitting diodes and photodetectors with the application of radiation technology. The study of photoconductivity in the absorption band was carried out at different temperatures and external electric fields. Due to the partial compensation of certain structural defects (VGa), the electrical conductivity of the GaS crystal decreases. Simultaneous replacement of the cation vacancy - VYb and Yb-Ga cation atom (YbGa) due to the formation of two charged local centers of acceptor and donor type during the addition, allows the occurrence of a self-compensating event. For this reason, the specific resistance of the irradiated crystal increases and thermal activation and extinction events are observed in the temperature dependence of the photoconductivity, the photoconductivity of layered GaS (Yb, Sm) crystals in the absorption band occurs as a result of uneven surface energy regulation. The degree of smoothing of the surface potential depends on the radiation dose, the concentration of the additive atoms and the value and direction of the external field. The photoconductivity of layered and rich crystals implanted with H + and He + ions (GaS; GaS (Yb, Sm); GaSe) in the absorption region does not depend on the type of radiation and the nature of the additive atom, but only on the concentration of structural defects, thermal decomposition temperature and radiation dose. It was found that at low values of radiation doses partial compensation of initial defects, at high doses local irregular amorphous regions are formed, and during thermal evaporation of irradiated crystals, stable defects observed as a result of annihilation of defects allow purposeful control of crystal properties.

Names of scientific works:
1. Madatov R.S., Nadzhafarov A. I., Tagiev T. B., and Gazanfarov M. R. The Mechanism of a Current Passing in TlInSe2 Monocrystalsin Strong Fields. Surface Engineering and Applied Electrochemistry, 2010, Vol. 46, No. 5, pp. 497–500.
2. Р.С.Мадатов, А.И. Наджафов, Т.Б.Тагиев, М.Р., Газанфаров.Влияние ионизирующего излучения на механизм токопрохождения в монокристаллах TlInSe2. ФТТ. 2011., с. 90-95.
3. Madatov R.S., Nadzhafarov A. I., Tagiev T. B., and Gazanfarov M. R, The impact of ionizing radiation on the mechanism of current transition in TlInSe2 monocrystals. Recent Advances in Manufacturing Engineering.2010, pp. 69-75.
4. R. Madatov, M. Sojoudi, T. Sojoudi, P. Farhadi. Achieving steady and stable energy from AlGaAs-GaAs solar cells. ETASR international journal engineering, technology and Applied science Research, 2011, №6, p.151-154
5. Мадатов Р.С., Комаров Ф.Ф., Мустафаев Ю.М., Ахмедов Ф.А. Спектрометрия ионного рассеяния и комбинационное рассеяние света в монокристаллах GaS (GaSe), подвергнутых облучению водородом с энергией 140 кэв. Физика и техника полупроводников,2015,т.49,в.5.
6. R.S. Madatov, F.F. Komarov, V.V. Pilkoc, Yu.M. Mustafayeva, F.I. Akhmedova, and M. M. Jakhangirova. Investigation on structural and optical properties of GaS single Cristal exposed to irradiation by hydrogen with 70 keV energy. Journal of Electronic Materials. DOI: 10.1007/s11664-015-3904-4_ 2015 The Minerals, Metals Materials Society.
7.Madatov R.S.,Alekberov A.S. Влияние примеси на спектр поглощения в кристаллах GeS. Журнал прикладной спектроскопия. 2017 ,т.84, №1,с.56.
8. A.Sadigov, R.Madatov, F.Ahmadov, S.Suleymanov- A new detector concept for silicon photo-multiplies.Nucler Instrument and method in Physics Res.,A. a 824(2016)135-136.
9.Мадатов Р.С.,Наджафов А.И. и др.Особенности электропроводности кристаллов при фото-рентгеновском возбуждениях. Физика и техника полупроводников,2015,т.49,в.9 (РФ);
10. Tobnaghi M. D, Madatov R, Mustafayev Y, Abasov F. Influence of Gamma Radiation on Electric Properties of Silicon Solar Cells. Int. J. Pure Appl. Sci. Technol. 2014, v. 21, no. 1, p. 12-16.
11. Мадатов Р.С.1,2, Гасымов Ш.Г.3, Бабаев С.С.3, Алекперов А.С.4, Мовсумова И.М.5, Джабаров С.Г.1,4, Особенности механизма электропроводности в γ-облученных монокристаллах TlInSe2 под гидростатическим давлением, Физика и техника полупроводников, 2020, том 54, вып. 10, с.997-1002
12. Rahim Madatov, Rakshana Mamishova, Muslim Mamedov, Javanshir ISMAYILOV, Ulviya Faradjova, Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ-quanta, Turkish Journal of Physics (2020), 44: р.214 – 221.

Pedagogical activity:
Professor of the Physics Department of the Azerbaijan National Aviation Academy

Awards and prizes:
1. Honorary Diploma of NAN Azerbaijan - with the 50th anniversary
2. Honorary Diploma of NAN Azerbaijan - with the 60th anniversary

Main place of work and its address:
Institute of Radiation Problems of the Ministry of Science and Education of the Republic of Azerbaijan, AZ1143, B.Vakhabzadeh str., 9, Baku, Azerbaijan Republic

Position: Head of Laboratory

Office phone: (+994 12) 5383224
Mobile: (+994 50) 6609715
Home phone: (+994 12) 5734387