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Another success of the scientist of the Institute: “the youngest doctor of sciences”

Recently, senior researcher of the Institute of Radiation Problems of the Azerbaijan National Academy of Sciences (ANAS) Elchin Huseynov was awarded the degree of Doctor of Physics by the decision of the Higher Attestation Commission (HAC) under the President of the Republic of Azerbaijan.

Elchin Huseynov, born in 1986 in Saatli region, has been an employee of the Institute of Radiation Problems of ANAS since 2010. The young scientist entered the doctoral studies on Radiation Materials Science at the Institute in 2011. In 2014, he get PhD degree in physics, and since that year he has been the head of the Department of “Radiation Materials Science and Radiation Nanotechnology” at the National Center for Nuclear Research.

This year, Elchin Huseynov defended his doctoral dissertation on "Radioactive transformations in neutron flux in 3C-SiC nanocrystals and their effect on electronic processes" and was awarded the degree of Doctor of Physics by the HAC. During his fruitful activity, the scientist has carried out various works on radiation physics, nanoelectronics and nanonuclear technologies in prestigious centers of the United States, Germany, Italy, France, the Czech Republic, Austria, Slovenia, Turkey and the Russian Federation, etc. and actively participated in conferences and events.

Elchin Huseynov, whose scientific works are published in world-class and high-index journals, is the author of a total of 93 scientific works. About 40 of these scientific works were published in popular journals such as “Applied Physics A”, “Physics Letters A”, “Ceramics International”, “Solid State Sciences”, “Physica B: (Elsevier)”, “NANO”, “Silicon (Springer)”, etc. The number of references to the works of the scientist is more than 500. In international rating systems, h-index is equal to 18 and i10-index to 23.

Innovative researches and results of the young scientist

Elchin Huseynov's research is innovative and includes a number of new approaches. Thus, as a result of research conducted by the scientist, for the first time, neutron transformations were found in 3C-SiC nanocrystals, and n-type additives were obtained by neutron transmutation inside nanocrystalline 3C-SiC particles. The presence of agglomeration in nanocrystalline 3C-SiC particles at a maximum order of 70-80 nm as a result of neutron flux irradiation has been shown by HRTEM, TEM, FESEM and SEM analyzes. After neutron irradiation, an amorphous layer about 3 nm thick was detected on the surface of nanocrystalline 3C-SiC particles. The nanocrystalline nature of 3C-SiC particles was confirmed by HRTEM analysis, and defects or clusters in the nanomaterial after neutron irradiation were identified as “spots”. RIC conductivity etc. new indicators in 3C-SiC nanocrystals during neutron flux irradiation have been identified.

The study specifically states that some of the physical properties of 3C-SiC nanocrystals can be controlled by modifying the neutron flux, which increases the applicability of the material in electronics. With the duration of the neutron flux, the concentration of additives in the nanocrystalline 3C-SiC particles can be controlled. Changes in the concentration of newly formed additives directly lead to changes in the physical properties of the nanomaterial.

It should be noted that the results obtained by the scientist can be applied multidisciplinary within a combination of radiation materials science, nuclear physics, nanostructures and semiconductor physics. At the same time, the obtained nanomaterial with new and perfect properties is more economical. On the other hand, the management of the physical properties of nanomaterials will allow other alternative materials to be replaced by these materials. In general, the new 3C-SiC nanocrystals obtained by neutron transmutation are used in a number of fields, such as microelectronics, nanoelectronics, microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS) and ionizing environments (satellite (space) technology, nuclear technology, etc.).

He has chosen to conduct scientific research aimed at the development of radiation materials science, nanoelectronics and nanonuclear technologies in our country, as well as future training in these areas.

On behalf of the Director General of the Institute of Radiation Problems, corresponding member of ANAS, Professor Islam Mustafayev and numerous staff of the Institute, we congratulate our colleague, valuable young scientist Elchin Huseynov on this achievement and wish him success in his future scientific activities.

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