Structure

Phone: (99412) 539 33 91
Fax: (99412) 539 83 18
E-mail: oktaysamedov9@gmail.com

Head of the Laboratory: Corresponding member of ANAS, Doctor of physics and mathematics, Professor Samadov Ogtay Abil oglu

Total number of employees: 15

The main activities of the Laboratory:
Study of the effect of ionizing radiation on dielectric and electrical relaxation, impedance spectrum and phase transitions in crystals and solid solutions such as TlInS2 and TlGaSe₂.

The main scientific results of the Laboratory:
1. It has been determined that TlGaSe₂ crystal has anomalies in temperature dependences of dielectric permittivity and loss- angle tangent at temperatures above 300K (paraelectric phase). (T=415K and T=532K)
2. The complex impedance and complex dielectric spectrum of the TlGaSe₂ (Z٭(f)) crystal have been studied in the temperature range 100–550 K and frequencies 102–106 Hz. It has been shown that the TlGaSe₂ crystal has ion conductivity in the 415K÷532K temperature range. The equivalent circuit substitution method (Z″−Z′) has been used to analyze complex planar diagrams and determine the frequency domain boundary for each temperature.
3. It has been established that the boundary of the high-frequency region on the complex planar diagram (Z″–Z′) of a TlGaSe₂ crystal irradiated with γ-quanta at a dose of 20 Mrad shifts towards decreasing frequency, and two gadogrammas are observed on the complex planar diagrams (Z″–Z′). The mechanism of conductivity has been determined both in the irradiated and non-irradiated TlGaSe₂ crystals (electron and at high temperatures – ion). Type of polarization: electron and ion-relaxation polarization.