INSTITUTE OF RADIATION PROBLEMS
AZERBAIJAN NATIONAL ACADEMY OF SCIENCES
DEPARTMENT OF PHYSICAL, MATHEMATICAL AND TECHNICAL SCIENCES
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Structure

Laboratory of “Radiation Physics of Semiconductors”

Tel: (+994 12) 5383224
Fax: (+994 12) 5398318
E-mail: msrahim@rambler.ru

Mədətov Rəhim Səlim oğlu

Head of the structural unit:
Rahim Salim Madatov
Doctor of Physics and Mathematics, professor

Main area of activity of the structural unit: Development of the methods increasing radiation resistance of semiconductors; Development of the scientific bases for making radiation resistant devices.

Main scientific achievements of the structural unit: On the base of Aııı B binary compounds GaS; GaSe; GaTe and InSe lamellar monocrystals have been produced and studied. According to the obtained results the mechanism of formation and annealing of radiation defects in the lamellar semiconductors has been studied and the method of increasing their radiation resistance has been developed:

1. It has been determined that when GaS monocrystal is impured by 10-4 at % boron atom, the boron atom fills gallium vacancies and reduces the electroconductivity of the crystal. But when it’s impured by 102 at % boron atom, it accumulates in an interlaminar region and increases the conductivity.
2. When GaS<B> monocrystals is γ-irradiated, due to the recharge of the impurity levels in the band gap photosensitivity increaes at the expense of the rise in the life-time of the main charge carriers and the concentration of photosensitive centers.
3. It has been established that 10-4 at % embedded boron atom strengthens the ion-covalence bond in the perpendicular direction (along C axis) in GaS monocrystal and consequently increases the resistance of the crsytal to γ-rays.
4. Due to the study of the electric and photoelectric properties of boron-impured GaS, GaSe and InSe monocrystals it has been determined that there are large perspectives in making high-sensitive ionizing-radiation receivers in 0.3 – 2 mkm spectral region.