Structure

Phone: (+994 12) 5383224, (+99450) 6609715
Fax: (+994 12) 5398318
E-mail: msrahim@mail.ru

Head of the Laboratory is: Doctor of Sciences in Physics and Mathematics, Professor Madatov Rahim Salim oglu

Total number of employees: 13

The main activities of the laboratory are:
Development of methods for increasing the radiation resistance of semiconductor materials; development of the scientific foundation of radiation-resistant devices.

The main scientific results of the Laboratory are:
1. Mechanisms of radiation defect formation and welding processes in doped (Yb, Er, and Gd) and primary layered GaS and GaSe monocrystals, as well as resistance mechanism against gamma-quanta, were determined at a wide range of temperatures, illumination, and electric field intensities. It has been shown that the radiation-stimulating processes resulting from the interaction of the radiation defects formed under the cationic and anionic crystal lattices with the structural and doping elements make it possible to purposefully control the electrical, optical, and photoelectric properties of layered crystals and the creation of effective photoreceivers and photoconverters on their basis.
2. It has been determined that the photoconductivity of layered GaS (Yb, Sm) crystals in the absorption band is caused by the regulation of the non-smooth potential of the energy levels of the surface under the influence of an external electric field. The degree of smoothing of the surface potential depends on the radiation dose, the concentration of the dopant atoms, and the value and direction of the external field.
3. Layered GaS:Yb The uneven distribution of defects on the surface of the single crystal with dimensions ~ 30-40 nm and periodicity ~ 16 nm depends on the radiation dose and the degree of doping with charged particles and gamma quanta. As the radiation dose and the concentration of the dopant atoms increase, the amount of roughness decreases exponentially.