Structure

Phone: (+994 12) 5387145
Fax: (+994 12) 5398318
E-mail: farid-akhmedov@yandex.ru

Head of the Laboratory is: Doctor of Physical Sciences, Associate Professor Ahmadov Farid Ibrahim oglu

Total number of employees: 5

The main activities of the laboratory are:
Research and study of features of semiconductor heterostructures, avalanche photodiodes, avalanche phototransistors, and photo resistors based on Si that can work under the influence of high-energy ionizing radiation rays. Development of detectors, spectrometers, and dosimeters capable of recording ionizing radiation based on these structures.

The main scientific results of the laboratory are:
Deep, surface-pixel phototransistor structures of avalanche photodiodes have been developed and successfully tested. At the same time, a new iterative model was developed that accurately expresses the occurrence of the avalanche process in avalanche photodiodes and the influence of the resistance of the volume charge region, capacitance, and extra-high voltage on the parameters of avalanche diodes. It is determined that the amplification factor can vary up to 2 times depending on the resistance of the volume-charge region. As this resistance decreases, the amplification factor increases. The new model has been experimentally tested with Laser components and Zekotek photodiodes, and the accuracy of the model has been confirmed experimentally.
The operating voltage of newly developed MSFD-3NM photodiodes has been reduced by 17%, temperature dependence by 34%, and dark current by 5 times. In addition, the amplification factor of the new photodiode has increased by 1.8 times. The results obtained showed that the newly developed MSFD-3NM diode surpasses the MSFD-3NK diode in most parameters and can be successfully applied in most experiments.